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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2416 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) *High Switching Speed APPLICATIONS *Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature w w scs .i w 500 400 7 10 120 150 -65~150 V V .cn mi e V A PC W Tj Tstg Storage Temperature Range isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= 0.2A ; L= 25mH IC= 5A; IB= 1A B 2SC2416 MIN 400 TYP. MAX UNIT V 1.0 1.5 0.1 0.1 V V mA mA IC= 5A; IB= 1A B VCB= 500V;IE= 0 VEB= 5V; IC= 0 IC= 0.1A ; VCE= 5V Switching Times ton tstg tf Turn-On Time Storage Time Fall Time w w. w sem isc IC= 5A ; VCE= 5V IC= 0.5A; VCE= 10V IC= 5A ;IB1= -IB2= 1A .cn i 8 15 11 MHz 1 3 1 s s s isc Websitewww.iscsemi.cn |
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